ALEXANDRIA, Va., Sept. 17 -- United States Patent no. 12,419,083, issued on Sept. 16, was assigned to AUO Corp. (Hsinchu, Taiwan).
"Semiconductor device and manufacturing method thereof" was invented by Chen-Shuo Huang (Hsinchu, Taiwan).
According to the abstract* released by the U.S. Patent & Trademark Office: "A semiconductor device and its manufacturing method are provided. The semiconductor device includes a substrate, an oxygen-containing protrusive structure disposed above the substrate, a metal oxide layer, a gate dielectric layer disposed on the metal oxide layer, and a gate disposed on the gate dielectric layer. The oxygen-containing protrusive structure has a first surface, a second surface opposite to the first surface, and sid...