ALEXANDRIA, Va., Oct. 8 -- United States Patent no. 12,439,647, issued on Oct. 7, was assigned to AUO Corp. (Hsinchu, Taiwan).
"Semiconductor device and manufacturing method thereof" was invented by Chen-Shuo Huang (Hsinchu, Taiwan).
According to the abstract* released by the U.S. Patent & Trademark Office: "A semiconductor device includes a substrate, a semiconductor structure, a gate dielectric layer, a first gate, a source and a drain. The semiconductor structure is disposed above the substrate. The semiconductor structure includes a first thick portion, a second thick portion, and a thin portion between the first thick portion and the second thick portion. The gate dielectric layer is disposed on the semiconductor structure. The first...