ALEXANDRIA, Va., June 17 -- United States Patent no. 12,317,573, issued on May 27, was assigned to AUO Corp. (Hsinchu, Taiwan).
"Thin film transistor" was invented by Kuo-Jui Chang (Hsinchu, Taiwan), Wen-Tai Chen (Hsinchu, Taiwan), Chi-Sheng Chiang (Hsinchu, Taiwan), Yu-Chuan Liao (Hsinchu, Taiwan), Chien-Sen Weng (Hsinchu, Taiwan) and Ming-Wei Sun (Hsinchu, Taiwan).
According to the abstract* released by the U.S. Patent & Trademark Office: "A thin film transistor includes a substrate, a semiconductor layer, a gate insulating layer, a gate, a source and a drain. The semiconductor layer is located above the substrate. The gate insulating layer is located above the semiconductor layer. The gate is located above the gate insulating layer and...