US Patent Issued to AUO on May 27 for "Semiconductor device and manufacturing method thereof" (Taiwanese Inventor)

ALEXANDRIA, Va., June 17 -- United States Patent no. 12,317,596, issued on May 27, was assigned to AUO Corp. (Hsinchu, Taiwan).

"Semiconductor device and manufacturing method thereof" was invented by Yang-Shun Fan (Hsinchu, Taiwan).

According to the abstract* released by the U.S. Patent & Trademark Office: "A semiconductor device includes a substrate, a first thin-film transistor, and a second thin-film transistor. The first and second thin-film transistors are disposed on the substrate. The first thin-film transistor includes stacked first and second metal oxide layers. An oxygen concentration of the first metal oxide layer is less than an oxygen concentration of the second metal oxide layer, and a thickness of the second metal oxide lay...