US Patent Issued to AUO on May 27 for "Memory device, memory circuit and manufacturing method of memory circuit" (Taiwanese Inventor)

ALEXANDRIA, Va., June 17 -- United States Patent no. 12,317,477, issued on May 27, was assigned to AUO Corp. (Hsinchu, Taiwan).

"Memory device, memory circuit and manufacturing method of memory circuit" was invented by Chen-Shuo Huang (Hsinchu, Taiwan).

According to the abstract* released by the U.S. Patent & Trademark Office: "A memory device includes a substrate, an oxide insulating layer, a first metal oxide layer, a first gate dielectric layer, a second metal oxide layer, a second gate dielectric layer, a first gate, a source, and a drain. The oxide insulating layer is located above the substrate. The first metal oxide layer is located above the oxide insulating layer. The first gate dielectric layer is located above the first metal o...