ALEXANDRIA, Va., June 25 -- United States Patent no. 12,342,623, issued on June 24, was assigned to AUO Corp. (Hsinchu, Taiwan).

"Thin film transistor" was invented by Ssu-Hui Lu (Hsinchu, Taiwan), Chang-Hung Li (Hsinchu, Taiwan), Kuo-Yu Huang (Hsinchu, Taiwan) and Maw-Song Chen (Hsinchu, Taiwan).

According to the abstract* released by the U.S. Patent & Trademark Office: "A thin film transistor includes a bottom gate, a semiconductor layer, a top gate, a first auxiliary conductive pattern, a source, and a drain. The semiconductor layer includes a first semiconductor region, a second semiconductor region, a first heavily doped region, a second heavily doped region, a third heavily doped region, a first lightly doped region, a second lightl...