ALEXANDRIA, Va., June 18 -- United States Patent no. 12,328,907, issued on June 10, was assigned to AUO Corp. (Hsinchu, Taiwan).
"Semiconductor device and manufacturing method thereof" was invented by Chia-Wei Chiang (Hsinchu, Taiwan), Yang-Shun Fan (Hsinchu, Taiwan) and Chen-Shuo Huang (Hsinchu, Taiwan).
According to the abstract* released by the U.S. Patent & Trademark Office: "A semiconductor device, including a substrate, a semiconductor structure, a first gate dielectric layer, a first gate, a source, and a drain, is provided. The semiconductor structure includes a first metal oxide layer and a second metal oxide layer. The second metal oxide layer covers a top surface and a sidewall of the first metal oxide layer. The second metal o...