US Patent Issued to ATOMERA on Oct. 7 for "Semiconductor device including a superlattice providing metal work function tuning" (Massachusetts, California Inventors)

ALEXANDRIA, Va., Oct. 8 -- United States Patent no. 12,439,658, issued on Oct. 7, was assigned to ATOMERA Inc. (Los Gatos, Calif.).

"Semiconductor device including a superlattice providing metal work function tuning" was invented by Robert J. Mears (Wellesley, Mass.) and Hideki Takeuchi (San Jose, Calif.).

According to the abstract* released by the U.S. Patent & Trademark Office: "A semiconductor gate-all-around (GAA) device may include a semiconductor substrate, source and drain regions on the semiconductor substrate, a plurality of semiconductor nanostructures extending between the source and drain regions, a gate surrounding the plurality of semiconductor nanostructures in a gate-all-around arrangement, and a dopant diffusion liner adj...