US Patent Issued to ATOMERA on Oct. 7 for "Bipolar junction transistors including emitter-base and base-collector superlattices" (Arizona Inventor)

ALEXANDRIA, Va., Oct. 8 -- United States Patent no. 12,439,618, issued on Oct. 7, was assigned to ATOMERA Inc. (Los Gatos, Calif.).

"Bipolar junction transistors including emitter-base and base-collector superlattices" was invented by Richard Burton (Phoenix).

According to the abstract* released by the U.S. Patent & Trademark Office: "A bipolar junction transistor (BJT) may include a substrate defining a collector region therein. A first superlattice may be on the substrate including a plurality of stacked groups of first layers, with each group of first layers including a first plurality of stacked base semiconductor monolayers defining a first base semiconductor portion, and at least one first non-semiconductor monolayer constrained wit...