US Patent Issued to ATOMERA on Nov. 18 for "Semiconductor device including a superlattice and enriched silicon 28 epitaxial layer" (Massachusetts, Arizona, California Inventors)

ALEXANDRIA, Va., Nov. 18 -- United States Patent no. 12,477,798, issued on Nov. 18, was assigned to ATOMERA Inc. (Los Gatos, Calif.).

"Semiconductor device including a superlattice and enriched silicon 28 epitaxial layer" was invented by Marek Hytha (Brookline, Mass.), Keith Doran Weeks (Chandler, Ariz.), Nyles Wynn Cody (Tempe, Ariz.) and Hideki Takeuchi (San Jose, Calif.).

According to the abstract* released by the U.S. Patent & Trademark Office: "A semiconductor device may include a first single crystal silicon layer having a first percentage of silicon 28; a second single crystal silicon layer having a second percentage of silicon 28 higher than the first percentage of silicon 28; and a superlattice between the first and second single...