US Patent Issued to ATOMERA on May 27 for "Method for making semiconductor device with selective etching of superlattice to accumulate non-semiconductor atoms" (Massachusetts, Arizona Inventors)

ALEXANDRIA, Va., June 17 -- United States Patent no. 12,315,723, issued on May 27, was assigned to ATOMERA Inc. (Los Gatos, Calif.).

"Method for making semiconductor device with selective etching of superlattice to accumulate non-semiconductor atoms" was invented by Marek Hytha (Brookline, Mass.), Keith Doran Weeks (Chandler, Ariz.) and Nyles Wynn Cody (Tempe, Ariz.).

According to the abstract* released by the U.S. Patent & Trademark Office: "A method for making a semiconductor device may include forming a superlattice above a semiconductor layer, the superlattice including a plurality of stacked groups of layers, with each group of layers including a plurality of stacked base semiconductor monolayers defining a base semiconductor portion...