US Patent Issued to ATOMERA on May 27 for "Method for making a radio frequency silicon-on-insulator (RFSOI) wafer including a superlattice" (British, American Inventors)

ALEXANDRIA, Va., June 17 -- United States Patent no. 12,315,722, issued on May 27, was assigned to ATOMERA Inc. (Los Gatos, Calif.).

"Method for making a radio frequency silicon-on-insulator (RFSOI) wafer including a superlattice" was invented by Nyles Wynn Cody (Tempe, Ariz.), Keith D. Weeks (Chandler, Ariz.), Robert Michael Vyne (Chandler, Ariz.) and Robert J. Stephenson (Duxford, Great Britain).

According to the abstract* released by the U.S. Patent & Trademark Office: "A method for making a semiconductor device may include, in an epitaxial deposition tool, performing an anneal on a semiconductor on insulator (SOI) substrate including a first semiconductor layer, an insulating layer on the first semiconductor layer, and a second semico...