US Patent Issued to ATOMERA on May 20 for "Method for making memory device including a superlattice gettering layer" (California Inventor)

ALEXANDRIA, Va., June 16 -- United States Patent no. 12,308,229, issued on May 20, was assigned to ATOMERA Inc. (Los Gatos, Calif.).

"Method for making memory device including a superlattice gettering layer" was invented by Hideki Takeuchi (San Jose, Calif.).

According to the abstract* released by the U.S. Patent & Trademark Office: "A method for making a semiconductor device may include forming a superlattice gettering layer on a substrate. The superlattice may include a plurality of stacked groups of layers, with each group of layers comprising a plurality of stacked base semiconductor monolayers defining a base semiconductor portion, and at least one non-semiconductor monolayer constrained within a crystal lattice of adjacent base semi...