US Patent Issued to ATOMERA on Aug. 5 for "Method for making DMOS devices including a superlattice and field plate for drift region diffusion" (Arizona, California Inventors)

ALEXANDRIA, Va., Aug. 6 -- United States Patent no. 12,382,689, issued on Aug. 5, was assigned to ATOMERA Inc. (Los Gatos, Calif.).

"Method for making DMOS devices including a superlattice and field plate for drift region diffusion" was invented by Richard Burton (Phoenix) and Shuyi Li (Los Gatos, Calif.).

According to the abstract* released by the U.S. Patent & Trademark Office: "A method for making a double-diffused MOS (DMOS) device may include forming a semiconductor layer having a first conductivity type, forming a drift region of a second conductivity type in the semiconductor substrate, forming spaced-apart source and drain regions in the semiconductor layer, and forming a first superlattice on the semiconductor layer. The first su...