US Patent Issued to ASML NETHERLANDS on Sept. 30 for "Method for generating patterning device pattern at patch boundary" (American, Chinese Inventors)

ALEXANDRIA, Va., Sept. 30 -- United States Patent no. 12,430,490, issued on Sept. 30, was assigned to ASML NETHERLANDS B.V. (Veldhoven, Netherlands).

"Method for generating patterning device pattern at patch boundary" was invented by Quan Zhang (San Jose, Calif.), Yong-Ju Cho (San Jose, Calif.), Zhangnan Zhu (San Jose, Calif.), Boyang Huang (Shenzhen, China) and Been-Der Chen (Milpitas, Calif.).

According to the abstract* released by the U.S. Patent & Trademark Office: "A method for generating a mask pattern to be employed in a patterning process. The method including obtaining (i) a first feature patch including a first polygon portion of an initial mask pattern, and (ii) a second feature patch including a second polygon portion of the i...