ALEXANDRIA, Va., Nov. 18 -- United States Patent no. 12,474,642, issued on Nov. 18, was assigned to ASML Netherlands B.V. (Veldhoven, Netherlands).
"Metrology method for measuring an etched trench and associated metrology apparatus" was invented by Simon Gijsbert Josephus Mathijssen (Rosmalen, Netherlands) and Arie Jeffrey Den Boef (Waalre, Netherlands).
According to the abstract* released by the U.S. Patent & Trademark Office: "Disclosed is method of determining at least one homogeneity metric describing homogeneity of an etched trench on a substrate formed by a lithographic manufacturing process. The method comprises obtaining one or more images of the etched trench, wherein each of said one or more images comprises a spatial representa...