US Patent Issued to ASML NETHERLANDS on Nov. 11 for "Etch bias characterization and method of using the same" (California Inventors)

ALEXANDRIA, Va., Nov. 11 -- United States Patent no. 12,468,232, issued on Nov. 11, was assigned to ASML NETHERLANDS B.V. (Veldhoven, Netherlands).

"Etch bias characterization and method of using the same" was invented by Yongfa Fan (Sunnyvale, Calif.), Leiwu Zheng (San Jose, Calif.), Mu Feng (San Jose, Calif.), Qian Zhao (San Jose, Calif.) and Jen-Shiang Wang (Sunnyvale, Calif.).

According to the abstract* released by the U.S. Patent & Trademark Office: "A method involving determining an etch bias for a pattern to be etched using an etch step of a patterning process based on an etch bias model, the etch bias model including a formula having a variable associated with a spatial property of the pattern or with an etch plasma species concen...