ALEXANDRIA, Va., Jan. 29 -- United States Patent no. 12,210,291, issued on Jan. 28, was assigned to ASML NETHERLANDS B.V. (Veldhoven, Netherlands).
"Aberration impact systems, models, and manufacturing processes" was invented by Xingyue Peng (San Jose, Calif.), Zhan Shi (San Jose, Calif.), Duan-Fu Stephen Hsu (Fremont, Calif.), Rafael C. Howell (Santa Clara, Calif.) and Gerui Liu (Santa Clara, Calif.).
According to the abstract* released by the U.S. Patent & Trademark Office: "Scanner aberration impact modeling in a semiconductor manufacturing process, which may facilitate co-optimization of multiple scanners. Scanner aberration impact modeling may include executing a calibrated model and controlling a scanner based on output from the mod...