ALEXANDRIA, Va., Feb. 11 -- United States Patent no. 12,547,815, issued on Feb. 10, was assigned to ASML NETHERLANDS B.V. (Veldhoven, Netherlands).
"Multiscale physical etch modeling and methods thereof" was invented by Syam Parayil Venugopalan (Eindhoven, Netherlands), Mohammad Reza Kamali (Eindhoven, Netherlands) and Michael Kubis (Meerbusch, Germany).
According to the abstract* released by the U.S. Patent & Trademark Office: "Systems and methods for simulating a plasma etch process are disclosed. According to certain embodiments, a method for simulating a plasma etch process may include predicting a first characteristic of a particle of a plasma in a first scale based on a first plurality of parameters; predicting a second characterist...