US Patent Issued to ASM IP Holding on Sept. 30 for "Silicon nitride and silicon oxide deposition methods using fluorine inhibitor" (Japanese, South Korean Inventors)

ALEXANDRIA, Va., Sept. 30 -- United States Patent no. 12,431,354, issued on Sept. 30, was assigned to ASM IP Holding B.V. (Almere, Netherlands).

"Silicon nitride and silicon oxide deposition methods using fluorine inhibitor" was invented by Takashi Mizoguchi (Setagaya, Japan), Eiichiro Shiba (Hachioji, Japan), Shinya Ueda (Hachioji, Japan) and Sunja Kim (Hwaseong-si, South Korea).

According to the abstract* released by the U.S. Patent & Trademark Office: "Methods of depositing material on a surface of a substrate are disclosed. The methods include using a fluorine reactant to reduce a growth rate per cycle of silicon oxide and/or silicon nitride deposited onto a surface of a substrate."

The patent was filed on June 28, 2021, under Applic...