US Patent Issued to ASM IP Holding on Sept. 23 for "Structures with boron- and gallium-doped silicon germanium layers and methods and systems for forming same" (Belgian, Finnish Inventors)

ALEXANDRIA, Va., Sept. 23 -- United States Patent no. 12,421,620, issued on Sept. 23, was assigned to ASM IP Holding B.V. (Almere, Netherlands).

"Structures with boron- and gallium-doped silicon germanium layers and methods and systems for forming same" was invented by Wonjong Kim (Leuven, Belgium), Rami Khazaka (Leuven, Belgium), Michael Givens (Oud-Heverlee, Belgium) and Charles Dezelah (Helsinki).

According to the abstract* released by the U.S. Patent & Trademark Office: "Some examples herein provide a method of forming a doped silicon germanium layer. The method may include simultaneously exposing a substrate to (a) a silicon precursor, (b), a germanium precursor, (c) a boron precursor, and (d) a heteroleptic gallium precursor. The he...