ALEXANDRIA, Va., Sept. 23 -- United States Patent no. 12,424,490, issued on Sept. 23, was assigned to ASM IP Holding B.V. (Almere, Netherlands).
"Halogenation-based gapfill method and system" was invented by Timothee Blanquart (Oud-Heverlee, Belgium), Rene Henricus Jozef Vervuurt (Leuven, Belgium) and Jihee Jeon (Leuven, Belgium).
According to the abstract* released by the U.S. Patent & Trademark Office: "A method and system for forming material within a gap on a surface of a substrate are disclosed. An exemplary method includes forming a material layer on a surface of the substrate within a first reaction chamber, exposing the material layer to a halogen reactant in a second reaction chamber to thereby form a flowable layer comprising a ...