US Patent Issued to ASM IP Holding on Sept. 2 for "Transition metal nitride deposition method" (Finnish, Belgian Inventors)

ALEXANDRIA, Va., Sept. 3 -- United States Patent no. 12,404,583, issued on Sept. 2, was assigned to ASM IP Holding B.V. (Almere, Netherlands).

"Transition metal nitride deposition method" was invented by Elina Farm (Helsinki), Jan Willem Maes (Wilrijk, Belgium), Charles Dezelah (Helsinki) and Shinya Iwashita (Helsinki).

According to the abstract* released by the U.S. Patent & Trademark Office: "Methods are provided for depositing a transition metal nitride-containing material on a substrate in the field of manufacturing semiconductor devices. Methods according to the current disclosure comprise a cyclic deposition process, in which a substrate is provided in a reaction chamber, an organometallic transition metal precursor is provided to t...