US Patent Issued to ASM IP Holding on Sept. 2 for "Method for depositing boron and gallium containing silicon germanium layers" (Belgian, American Inventors)

ALEXANDRIA, Va., Sept. 3 -- United States Patent no. 12,406,846, issued on Sept. 2, was assigned to ASM IP Holding B.V. (Almere, Netherlands).

"Method for depositing boron and gallium containing silicon germanium layers" was invented by Lucas Petersen Barbosa Lima (Heverlee, Belgium), Joe Margetis (Gilbert, Ariz.), John Tolle (Gilbert, Ariz.), Rami Khazaka (Leuven, Belgium) and Qi Xie (Wilsele, Belgium).

According to the abstract* released by the U.S. Patent & Trademark Office: "Methods and devices for epitaxially growing boron- and gallium-doped silicon germanium layers. The layers may be used, for example, as a p-type source and/or drain regions in field effect transistors."

The patent was filed on May 21, 2021, under Application No. 1...