US Patent Issued to ASM IP Holding on Sept. 16 for "Method and system for forming silicon nitride layer using low radio frequency plasma process" (Japanese Inventors)

ALEXANDRIA, Va., Sept. 17 -- United States Patent no. 12,417,911, issued on Sept. 16, was assigned to ASM IP Holding B.V. (Almere, Netherlands).

"Method and system for forming silicon nitride layer using low radio frequency plasma process" was invented by Yuko Kengoyama (Kawasaki, Japan) and Makoto Igarashi (Fuchu, Japan).

According to the abstract* released by the U.S. Patent & Trademark Office: "Methods of forming treated silicon nitride layers are disclosed. Exemplary methods include forming a silicon nitride layer overlying the substrate by providing a silicon precursor to the reaction chamber for a silicon precursor pulse period, providing a nitrogen reactant to the reaction chamber for a reactant pulse period, during a deposition pr...