US Patent Issued to ASM IP Holding on Oct. 7 for "Methods and systems for forming a layer comprising vanadium and oxygen" (Belgian, Finnish Inventors)

ALEXANDRIA, Va., Oct. 8 -- United States Patent no. 12,435,417, issued on Oct. 7, was assigned to ASM IP Holding B.V. (Almere, Netherlands).

"Methods and systems for forming a layer comprising vanadium and oxygen" was invented by Giuseppe Alessio Verni (Jodoigne, Belgium), Ren-Jie Chang (Leuven, Belgium), Qi Xie (Wilsele, Belgium) and Charles Dezelah (Helsinki).

According to the abstract* released by the U.S. Patent & Trademark Office: "Disclosed are methods and systems for depositing layers comprising vanadium and oxygen. The layers are formed onto a surface of a substrate. The deposition process may be a cyclical deposition process. Exemplary structures in which the layers may be incorporated include field effect transistors, VNAND cell...