ALEXANDRIA, Va., Oct. 28 -- United States Patent no. 12,451,347, issued on Oct. 21, was assigned to ASM IP Holding B.V. (Almere, Netherlands).
"Semiconductor processing method" was invented by Wangyu Lim (Hwaseong-si, South Korea), Heesung Kang (Anyang-si, South Korea), Jaeok Ko (Seoul, South Korea), Jaebin Ahn (Suwon-si, South Korea), Sunja Kim (Hwaseong-si, South Korea), Youngjae Kim (Cheonan-si, South Korea) and Donghyun Ko (Hwaseong-si, South Korea).
According to the abstract* released by the U.S. Patent & Trademark Office: "A substrate processing method of forming an air gap includes: forming deposition inhibitor sites in a lower space between a first protrusion and a second protrusion; and forming film-forming sites and an interlaye...