US Patent Issued to ASM IP Holding on Oct. 21 for "Methods for selectively depositing an amorphous silicon film on a substrate" (Belgian Inventor)

ALEXANDRIA, Va., Oct. 28 -- United States Patent no. 12,448,682, issued on Oct. 21, was assigned to ASM IP Holding B.V. (Almere, Netherlands).

"Methods for selectively depositing an amorphous silicon film on a substrate" was invented by Timothee Blanquart (Oud-Heverlee, Belgium).

According to the abstract* released by the U.S. Patent & Trademark Office: "A method for selectively depositing an amorphous silicon film on a substrate comprising a metallic nitride surface and a metallic oxide surface is disclosed. The method may include; providing a substrate within a reaction chamber, heating the substrate to a deposition temperature, contacting the substrate with silicon iodide precursor, and selectively depositing the amorphous silicon film...