US Patent Issued to ASM IP Holding on Oct. 21 for "Method of forming a vanadium nitride-containing layer" (Belgian, Finnish Inventors)

ALEXANDRIA, Va., Oct. 28 -- United States Patent no. 12,448,683, issued on Oct. 21, was assigned to ASM IP Holding B.V. (Almere, Netherlands).

"Method of forming a vanadium nitride-containing layer" was invented by Pia Homm Jara (Leuven, Belgium), Werner Knaepen (Leuven, Belgium), Dieter Pierreux (Dilbeek, Belgium), Bert Jongbloed (Oud-Heverlee, Belgium), Panagiota Arnou (Leuven, Belgium), Ren-Jie Chang (Leuven, Belgium), Qi Xie (Wilsele, Belgium), Giuseppe Alessio Verni (Vantaa, Finland) and Gido van der Star (Leuven, Belgium).

According to the abstract* released by the U.S. Patent & Trademark Office: "Methods of forming a vanadium nitride-containing layer. The method comprises providing a substrate within a reaction chamber of a reactor...