US Patent Issued to ASM IP Holding on May 20 for "Method for forming metal silicon oxide and metal silicon oxynitride layers" (Belgian, Japanese Inventors)

ALEXANDRIA, Va., June 16 -- United States Patent no. 12,305,281, issued on May 20, was assigned to ASM IP Holding B.V. (Almere, Netherlands).

"Method for forming metal silicon oxide and metal silicon oxynitride layers" was invented by Takashi Yoshida (Fuchu, Japan) and Rene Vervuurt (Leuven, Belgium).

According to the abstract* released by the U.S. Patent & Trademark Office: "Methods of forming metal silicon oxide layers and metal silicon oxynitride layers are disclosed. Exemplary methods include providing a silicon precursor to the reaction chamber for a silicon precursor pulse period, providing a first metal precursor to the reaction chamber for a first metal precursor pulse period, and providing a first reactant to the reaction chamber...