ALEXANDRIA, Va., March 5 -- United States Patent no. 12,243,742, issued on March 4, was assigned to ASM IP Holding B.V. (Almere, Netherlands).
"Method for processing a substrate" was invented by Seunghyun Lee (Seoul, South Korea), Hyunchul Kim (Hwaseong-si, South Korea), Seungwoo Choi (Hwaseong-si, South Korea) and Yeahyun Gu (Hwaseong-si, South Korea).
According to the abstract* released by the U.S. Patent & Trademark Office: "Provided is a method to adjust a film stress. In one embodiment, a first film is formed on the substrate by supplying a first reactant and a second reactant sequentially and alternately in a first step, and the first film is converted into a second film by supplying a third reactant to the first film in a second st...