ALEXANDRIA, Va., June 4 -- United States Patent no. 12,322,591, issued on June 3, was assigned to ASM IP Holding B.V. (Almere, Netherlands).
"Thin film deposition process" was invented by Naoki Inoue (Tokyo).
According to the abstract* released by the U.S. Patent & Trademark Office: "Provided is a thin film deposition process that allows high-precision control of the in-plane distribution of a thin film being deposited on a substrate. The process is a process of depositing a thin film on a substrate in a chamber by atomic layer deposition (ALD) which includes repeating a deposition cycle to deposit the thin film on the substrate. The deposition cycle includes the steps of: feeding a reactive gas and a carrier gas to the chamber and feedin...