ALEXANDRIA, Va., June 25 -- United States Patent no. 12,341,005, issued on June 24, was assigned to ASM IP Holding B.V. (Almere, Netherlands).
"Formation of SiCN thin films" was invented by Varun Sharma (Helsinki).
According to the abstract* released by the U.S. Patent & Trademark Office: "Methods for depositing silicon-containing thin films, such as SiCN films, on a substrate in a reaction space are provided. The methods can include a vapor deposition process utilizing a vapor-phase silicon precursor comprising a halogen and a second vapor-phase reactant comprising an amine reactant. In some embodiments an atomic layer deposition (ALD) cycle comprises alternately and sequentially contacting the substrate with a silicon precursor comprisi...