US Patent Issued to ASM IP Holding on July 22 for "Methods for forming a boron nitride film by a plasma enhanced atomic layer deposition process" (Japanese Inventor)

ALEXANDRIA, Va., July 23 -- United States Patent no. 12,365,983, issued on July 22, was assigned to ASM IP Holding B.V. (Almere, Netherlands).

"Methods for forming a boron nitride film by a plasma enhanced atomic layer deposition process" was invented by Atsuki Fukazawa (Tama, Japan).

According to the abstract* released by the U.S. Patent & Trademark Office: "Methods for forming a boron nitride film by a plasma enhanced atomic layer deposition (PEALD) process are provided. The methods may include: providing a substrate into a reaction chamber; and performing at least one unit deposition cycle of a PEALD process, wherein a unit cycle comprises, contacting the substrate with a vapor phase reactant comprising a boron precursor, wherein the b...