US Patent Issued to ASM IP Holding on July 22 for "Atomic layer deposition and etching of transition metal dichalcogenide thin films" (Finnish Inventors)

ALEXANDRIA, Va., July 23 -- United States Patent no. 12,365,988, issued on July 22, was assigned to ASM IP Holding B.V. (Almere, Netherlands).

"Atomic layer deposition and etching of transition metal dichalcogenide thin films" was invented by Jani Hamalainen (Espoo, Finland), Mikko Ritala (Espoo, Finland) and Markku Leskela (Espoo, Finland).

According to the abstract* released by the U.S. Patent & Trademark Office: "Vapor deposition methods for depositing transition metal dichalcogenide (TMDC) films, such as rhenium sulfide thin films, are provided. In some embodiments TMDC thin films are deposited using a deposition cycle in which a substrate in a reaction space is alternately and sequentially contacted with a vapor phase transition meta...