US Patent Issued to ASM IP Holding on July 15 for "Method and system for forming a silicon oxycarbide layer and structure formed using same" (Japanese Inventors)

ALEXANDRIA, Va., July 16 -- United States Patent no. 12,359,312, issued on July 15, was assigned to ASM IP Holding B.V. (Almere, Netherlands).

"Method and system for forming a silicon oxycarbide layer and structure formed using same" was invented by Takashi Yoshida (Machida, Japan), Kai Okabe (Kawasaki, Japan) and Zecheng Liu (Inagi, Japan).

According to the abstract* released by the U.S. Patent & Trademark Office: "Methods of forming a silicon oxycarbide layer on a surface of a substrate are disclosed. Exemplary methods include providing an oxygen-free reactant to a reaction chamber and performing one or more deposition cycles, wherein each deposition cycle includes providing a silicon precursor to the reaction chamber for a silicon prec...