ALEXANDRIA, Va., Jan. 13 -- United States Patent no. 12,522,918, issued on Jan. 13, was assigned to ASM IP Holding B.V. (Almere, Netherlands).
"Substrate processing method" was invented by DooHyun La (Suwon-si, South Korea), KyungEun Lee (Suwon-si, South Korea), HakJoon Lee (Seoul, South Korea), YoonKi Min (Hwaseong-si, South Korea), HaRim Kim (Hwaseong-si, South Korea), DongHyun Ko (Hwaseong-si, South Korea) and Seongil Cho (Cheonan-si, South Korea).
According to the abstract* released by the U.S. Patent & Trademark Office: "A substrate processing method capable of forming a film with an improved step coverage on a surface of a gap structure having a high aspect ratio includes: providing a gap structure having a first step and a second s...