ALEXANDRIA, Va., Feb. 5 -- United States Patent no. 12,218,000, issued on Feb. 4, was assigned to ASM IP Holding B.V. (Almere, Netherlands).
"Semiconductor processing method" was invented by HeeSung Kang (Anyang-si, South Korea).
According to the abstract* released by the U.S. Patent & Trademark Office: "A substrate processing method of easily forming an air gap includes: forming a first insulating layer having a first step coverage on a patterned structure including a first protrusion and a second protrusion; and forming, on the first insulating layer, a second insulating layer having a second step coverage lower than the first step coverage, wherein an air gap is formed between the first protrusion and the second protrusion by repeating...