ALEXANDRIA, Va., Feb. 3 -- United States Patent no. 12,543,516, issued on Feb. 3, was assigned to ASM IP Holding B.V. (Almere, Netherlands).
"Methods of forming silicon germanium structures" was invented by Wonjong Kim (Leuven, Belgium), Rami Khazaka (Leuven, Belgium) and Michael Eugene Givens (Oud-Heverlee, Belgium).
According to the abstract* released by the U.S. Patent & Trademark Office: "Methods for forming structures that include forming a heteroepitaxial layer on a substrate are disclosed. The presently disclosed methods comprise epitaxially forming a buffer layer on the substrate. The substrate has a substrate composition. The buffer layer has a buffer layer composition. The buffer layer composition is substantially identical to t...