ALEXANDRIA, Va., Feb. 19 -- United States Patent no. 12,227,835, issued on Feb. 18, was assigned to ASM IP Holding B.V. (Almere, Netherlands).
"Selective deposition of material comprising silicon and oxygen using plasma" was invented by Viraj Madhiwala (Helsinki), Daniele Chiappe (Espoo, Finland), Eva Tois (Espoo, Finland), Marko Tuominen (Helsinki), Charles Dezelah (Helsinki), Shaoren Deng (Ghent, Belgium), Anirudhan Chandrasekaran (Scottsdale, Ariz.), YongGyu Han (Seoul, South Korea), Michael Givens (Oud-Heverlee, Belgium), Andrea Illiberi (Leuven, Belgium) and Vincent Vandalon (Heverlee, Belgium).
According to the abstract* released by the U.S. Patent & Trademark Office: "Methods and vapor deposition assemblies of selectively depositin...