ALEXANDRIA, Va., Feb. 11 -- United States Patent no. 12,545,999, issued on Feb. 10, was assigned to ASM IP Holding B.V. (Almere, Netherlands).
"Method of depositing vanadium metal" was invented by Charles Dezelah (Helsinki), Eric James Shero (Phoenix), Qi Xie (Wilsele, Belgium), Giuseppe Alessio Verni (Ottignies, Belgium) and Petro Deminskyi (Helsinki).
According to the abstract* released by the U.S. Patent & Trademark Office: "The manufacture of semiconductor devices may include methods of forming vanadium metal on a substrate. The methods comprise providing a substrate in a reaction chamber, providing a vanadium precursor to the reaction chamber in a vapor phase and providing a reducing agent to the reaction chamber in a vapor phase to ...