US Patent Issued to ASM IP Holding on Feb. 10 for "Deposition of boron nitride films using hydrazido-based precursors" (Belgian, Finnish Inventors)

ALEXANDRIA, Va., Feb. 11 -- United States Patent no. 12,550,642, issued on Feb. 10, was assigned to ASM IP Holding B.V. (Almer, Netherlands).

"Deposition of boron nitride films using hydrazido-based precursors" was invented by Charles Dezelah (Helsinki) and Timothee Blanquart (Oud-Heverlee, Belgium).

According to the abstract* released by the U.S. Patent & Trademark Office: "A method of forming high quality a-BN layers. The method includes use of a precursor chemistry that is particularly suited for use in a cyclical deposition process such as in chemical vapor deposition (CVD), atomic layer deposition (ALD), and the like. In brief, new methods are described of forming boron nitride (BN) layers from precursors capable of growing amorphous...