ALEXANDRIA, Va., Dec. 9 -- United States Patent no. 12,492,472, issued on Dec. 9, was assigned to ASM IP Holding B.V. (Almere, Netherlands).
"Methods for depositing material within a gap using an inhibitor" was invented by Suvi P. Haukka (Helsinki), Eva E. Tois (Espoo, Finland) and Varun Sharma (Helsinki).
According to the abstract* released by the U.S. Patent & Trademark Office: "A method for depositing a material within a gap of a substrate in a cyclic deposition process. The method includes, within a reaction chamber, subjecting the gap to at least one deposition cycle, the at least one deposition cycle including: (a) contacting the gap with an inhibitor, wherein the gap includes a plurality of chemisorption sites on a surface thereof,...