US Patent Issued to ASM IP Holding on Dec. 9 for "Method for selective deposition of silicon nitride and structure including selectively-deposited silicon nitride layer" (Japanese Inventors)

ALEXANDRIA, Va., Dec. 9 -- United States Patent no. 12,494,361, issued on Dec. 9, was assigned to ASM IP Holding B.V. (Almere, Netherlands).

"Method for selective deposition of silicon nitride and structure including selectively-deposited silicon nitride layer" was invented by Agung Setiadi (Kokubunji, Japan), Hiroki Matsuda (Tama, Japan) and Jun Kawahara (Tokyo).

According to the abstract* released by the U.S. Patent & Trademark Office: "A method for selectively depositing silicon nitride on a first material relative to a second material is disclosed. An exemplary method includes performing one or more deposition cycles and performing a treatments process."

The patent was filed on July 6, 2023, under Application No. 18/218,726.

*For fu...