US Patent Issued to ASM IP Holding on Dec. 30 for "Method of forming low-k material layer with high-frequency power, structure including the layer, and system for forming same" (Japanese Inventors)

ALEXANDRIA, Va., Dec. 31 -- United States Patent no. 12,512,313, issued on Dec. 30, was assigned to ASM IP Holding B.V. (Almere, Netherlands).

"Method of forming low-k material layer with high-frequency power, structure including the layer, and system for forming same" was invented by Chie Kaneko (Tama, Japan), Ippei Yanagisawa (Sagamihara, Japan) and Yu Min Huang (Tama, Japan).

According to the abstract* released by the U.S. Patent & Trademark Office: "Methods and systems for forming a low-k material layer on a surface of a substrate and structures and devices formed using the method or system are disclosed. Exemplary methods include providing a substrate within a reaction chamber of a reactor system, providing one or more precursors to ...