US Patent Issued to ASM IP Holding on Aug. 5 for "Methods and systems for forming doped silicon nitride films" (Arizona Inventors)

ALEXANDRIA, Va., Aug. 6 -- United States Patent no. 12,378,667, issued on Aug. 5, was assigned to ASM IP Holding B.V. (Almere, Netherlands).

"Methods and systems for forming doped silicon nitride films" was invented by Xingye Wang (Gilbert, Ariz.), Fu Tang (Gilbert, Ariz.), Eric Jen cheng Liu (Tempe, Ariz.), Peijun Jerry Chen (Phoenix) and YoungChol Byun (Tempe, Ariz.).

According to the abstract* released by the U.S. Patent & Trademark Office: "A method of forming a doped silicon nitride film on a surface of a substrate and structures including the doped silicon nitride film are disclosed. Exemplary methods include forming a layer comprising silicon nitride using a first thermal process and forming a layer comprising doped silicon nitride...