US Patent Issued to ASM IP Holding on April 8 for "Method of forming an electronic structure using reforming gas, system for performing the method, and structure formed using the method" (Japanese Inventors)

ALEXANDRIA, Va., April 9 -- United States Patent no. 12,272,548, issued on April 8, was assigned to ASM IP Holding B.V. (Almere, Netherlands).

"Method of forming an electronic structure using reforming gas, system for performing the method, and structure formed using the method" was invented by Shinya Yoshimoto (Tama, Japan), Jun Yoshikawa (Hachioji, Japan) and Toshihisa Nozawa (Kawasaki, Japan).

According to the abstract* released by the U.S. Patent & Trademark Office: "Methods of and systems for reforming films comprising silicon nitride are disclosed. Exemplary methods include providing a substrate within a reaction chamber, forming activated species by irradiating a reforming gas with microwave radiation, and exposing substrate to the...