ALEXANDRIA, Va., April 9 -- United States Patent no. 12,272,546, issued on April 8, was assigned to ASM IP Holding B.V. (Almere, Netherlands).
"Formation of SiOC thin films" was invented by Toshiya Suzuki (Helsinki), Viljami J. Pore (Helsinki) and Hannu Huotari (Helsinki).
According to the abstract* released by the U.S. Patent & Trademark Office: "A process for forming a silicon oxycarbide (SiOC) thin film on a substrate in a reaction space by a plurality of deposition cycles is provided. At least one deposition cycle includes contacting a surface of the substrate with a silicon precursor that does not comprise nitrogen and a second reactant that includes reactive species. The reactive species are generated from a gas that flows continuou...