US Patent Issued to ASM IP Holding on April 22 for "Selective deposition method to form air gaps" (Finnish Inventor)

ALEXANDRIA, Va., June 6 -- United States Patent no. 12,283,520, issued on April 22, was assigned to ASM IP Holding B.V. (Almere, Netherlands).

"Selective deposition method to form air gaps" was invented by Chiyu Zhu (Helsinki).

According to the abstract* released by the U.S. Patent & Trademark Office: "A method for depositing a film to form an air gap within a semiconductor device is disclosed. An exemplary method comprises pulsing a metal halide precursor onto the substrate and pulsing an oxygen precursor onto a selective deposition surface. The method can be used to form an air gap to, for example, reduce a parasitic resistance of the semiconductor device."

The patent was filed on June 28, 2023, under Application No. 18/215,249.

*For ...