ALEXANDRIA, Va., June 19 -- United States Patent no. 12,334,306, issued on June 17, was assigned to ASM America Inc. (Phoenix).
"RF impedance matching network" was invented by Imran Ahmed Bhutta (Moorestown, N.J.).
According to the abstract* released by the U.S. Patent & Trademark Office: "In one embodiment, an RF impedance matching circuit is disclosed. The matching circuit is coupled between a plasma chamber and an RF source. The matching circuit includes a first electronically variable capacitor (EVC) having a first variable capacitance, a terminal of the first EVC being operably coupled to the RF input, and a second EVC having a second variable capacitance, a terminal of the second EVC being operably coupled to the RF output. A contro...